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| MITSUBISHI HYBRID ICs M57925L HYBRID IC FOR DRIVING TRANSISTOR MODULES DESCRIPTION M57925L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM30DY, QM50DY, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due to the electrical isolation between the input and output, and features a small outline of 10-pin SIP. OUTLINE DRAWING 33MAX. Dimensions in mm q Electrical isolation between input and output with integrated optocoupler. Viso=2500Vrms Propagation delay time ..................................... tPLH=2s (TYP) ..................................... tPLH=4s (TYP) Large load and sink current driving capability ................................................................. IOH=-1A (MAX) ................................................................ IOLP=-3A (MAX) q Applicable with TTL input q Small outline, 10-pin SIP package 2.54 3.0MAX. 2.54!9=22.860.2 1 10 1.8MAX. 7.5MAX. BLOCK DIAGRAM 10 9 8 7 Tr2 6 5 APPLICATION To drive Transistor Modules for Inverter applications 330 2 INTERFACE CIRCUIT 1 OPTO-COUPLER Tr1 CIRCUIT DIAGRAM 5 10 Tr1 1 9 8 7 2 Tr2 6 0.350.2 8.5MAX. 10.0MAX. Feb.1999 4.51.5 FEATURES 21MAX. MITSUBISHI HYBRID ICs M57925L HYBRID IC FOR DRIVING TRANSISTOR MODULES ABSOLUTE MAXIMUM RATINGS (Ta=-20 ~ +70C, unless otherwise noted) Symbol VCC VEE VI IOH IOLP Viso Tj Topg Tstg Parameter Supply voltage Supply voltage Input voltage Output current Isolation voltage Junction temperature Operating temperature Storage temperature Conditions DC DC Between terminals and Pulse width 10s, Freq. 2kHz, peak value Sinewave voltage 60Hz/min. Ta=25C Ratings 14 -6 -1 ~ 7 -1 3 2500 100 -20 ~ +70 -25 ~ +100 Unit V V V A A Vrms C C C ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=8V, unless otherwise noted) Symbol IIH IOH IOLP PD tPLH tr tPHL tf Parameter "H" input current "H" output current "L" output peak current Internal power dissipation "L-H" propagation delay time "L-H" rise time "H-L" propagation delay time "H-L" fall time VI=5V Rext=9 Cext=10F, R2=1 IOH=-0.5A, IOLP=1A, f=2kHz, D.F.=50% VI=04V, Tj=100C VI=04V, Tj=100C VI=50V, Tj=100C VI=50V, Tj=100C Test conditions Min. - -0.8 - - - - - - Limits Typ. 12 - 2 0.35 2 - 4 - Max. - - - - 4 2 6 3 Unit mA A A W s s s s Feb.1999 MITSUBISHI HYBRID ICs M57925L HYBRID IC FOR DRIVING TRANSISTOR MODULES PERFORMANCE CURVES PROPAGATION DELAY TIME VS. AMBIENT TEMPERATURE (TYPICAL) PROPAGATION DELAY TIME VS. "H" INPUT VOLTAGE (TYPICAL) PROPAGATION DELAY TIME "H"-"L" tPHL (s) "L"-"H" tPLH (s) PROPAGATION DELAY TIME "L"-"H" tPLH (s) "H"-"L" tPHL (s) 4 tPHL CONDITION VCC=10V,VEE=-4V Rext=9,R2=1 IPLH:VIN=0 4V IOHL:VIH=5 0V load:QM50DY f=2000Hz, D.F.=50% tPLH 6 3 4 CONDITION VCC=10V,VEE=-4V Rext=9,R2=1 load:QM50DY f=2000Hz, D.F.=50% Ta=100C tPHL 2 2 tPLH 1 0 25 50 75 100 0 4.0 4.5 5.0 5.5 VIH (V) AMBIENT TEMPERATURE Ta (C) "H" INPUT VOLTAGE PROPAGATION DELAY TIME "L"-"H" tPLH (s) "H"-"L" tPHL (s) PROPAGATION DELAY TIME VS. REVERSE SUPPLY VOLTAGE (TYPICAL) INTERNAL POWER DISSIPATION VS. "H" DUTY FACTOR (TYPICAL) INTERNAL POWER DISSIPATION PD (mW) 5 CONDITION VCC=10V Rext=9,R2=1 IPLH:VIN=0 4V IPHL:VIN=5 0V tPHL 3 load:QM50DY f=2000Hz, D.F.=50% Ta=100C 1000 CONDITION VCC=10V,VEE=-4V V1=5V,f=2kHz VO=1.6V IOH=-0.9A FOR QM50DY 4 800 600 400 IOH=-0.45A FOR QM30DY 0 20 40 60 80 100 2 tPLH 1 -3.2 -3.6 -4.0 -4.4 -4.8 -5.2 200 0 REVERSE SUPPLY VOLTAGE VEE (V) ALLOWABLE POWER DISSIPATION VS. AMBIENT TEMPERATURE (MAXIMUM RATING) "H" DUTY FACTOR D. F. (%) "H" OUTPUT CURRENT VS. "H" LIMITING RESISTOR (TYPICAL) ALLOWABLE POWER DISSIPATION PD (W) 2.5 "H" OUTPUT CURRENT IOH (mA) -1000 2.0 -800 1.5 -600 1.0 -400 0.5 -200 CONDITION VCC=10V,VEE=-4V VIN=5V,VO=1.5V 0 0 25 50 70 75 100 125 0 0 4 8 12 16 Rext () 20 AMBIENT TEMPERATURE Ta (C) "H" LIMITING RESISTOR Feb.1999 MITSUBISHI HYBRID ICs M57925L HYBRID IC FOR DRIVING TRANSISTOR MODULES "L" OUTPUT PEAK CURRENT VS. REVERSE SUPPLY VOLTAGE (TYPICAL) "L" OUTPUT PEAK CURRENT IOLP (A) VEE (V) 5 CONDITION VCC=10V f=200Hz, D.F.=1% Ta=25C FOR TRANSISTOR MODULES IC=10A R2=1 Rext=9 FOR QM50DY R2=3.3 Rext=18 FOR QM30DY -3.6 REVERSE SUPPLY VOLTAGE VS. "L" OUTPUT VOLTAGE (TYPICAL) CONDITION VCC=10V,Rext=9 R2=1 load:QM50DY Ta=25C 4 -3.2 3 REVERSE SUPPLY VOLTAGE -2.8 2 -2.4 1 -2.0 0 -2.4 -2.8 -3.2 -3.6 -4.0 -4.4 -1.6 -2.4 -2.8 -3.2 -3.6 -4.0 -4.4 REVERSE SUPPLY VOLTAGE VEE (V) "L" OUTPUT VOLTAGE VOL (V) POWER DISSIPATION OF Rext VS. "H" DUTY FACTOR (TYPICAL) CONDITION VCC=10V,VEE=-4V VO=1.6V IOH=-0.9A FOR QM50DY AVERAGE LOAD CURRENT IL(AV) (A) 10 AVERAGE POWER DISSIPATION OF Rext Rext (W) OUTPUT CHARACTERISTIC OF FULL WAVE RECTIFYING CIRCUIT WITH CENTER-TAPPED TRANSFORMER (FOR REFERENCE) 14 8 12 RIPPLE AMPLITUDE 10 VO 8 6 4 2 IOH=-0.45A FOR QM30DY 0 0 20 40 60 80 100 6 4 0 0.2 0.4 0.6 0.8 1.0 "H" DUTY FACTOR D. F. (%) OUTPUT VOLTAGE VO (V) IL T C1 VO T: 8V, 1A!2 CENTER-TAPPED TRANSFORMER C1: 4700F, C2: 470F C2 ZD 150 Feb.1999 MITSUBISHI HYBRID ICs M57925L HYBRID IC FOR DRIVING TRANSISTOR MODULES EXPLANATION OF FUNCTION (cf. Fig. 2, 3, 4, and 5) (1) With low input level (Vin=0 ~ 1V) Tr1 ...... OFF, Tr2 ...... ON The base terminal of transistor module is reverse biased with respect to its emitter by reverse power supply VEE. (2) With high input level (Vin=4 ~ 5V) Tr1 ...... ON, Tr2 ...... OFF The base terminal of transistor module is forward biased and drived by the current IOH through the resistor Rext. (3) With low input level (Vin=0 ~ 1V) Tr1 ...... OFF, Tr2 ...... ON The base terminal of transistor module is reverse biased as stated in (1) after flowing reverse recovery pulse current IOLP. The steady reverse base current is limited by the internal base-emitter resistor RBE of the transistor module. Typical application circuit 1/2QM50DY etc. LOAD IC +5V M57925L IO 1 2 3 4 5 6 R2 7 8 VO + C1 VCC + C2 DRIVER TTL etc. SINK 12mA input VIN + Rext VEE ZD R1 Typical operating waveform VIN 0 -IO 0 VI t IOH(IB1) IOLP(IB2) t VO 0 VOH VOL t Note: IOH and IOLP correspond to base forward current IB1 and base reverse current IB2 of the transistor module to be driven respectively. Feb.1999 |
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